Inhibited oxidation in lowtemperature grown GaAs surface layers observed by photoelectron spectroscopy
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Atomic Layer Deposition of HfO2 Thin Films on Si and GaAs Substrates
The atomic layer deposition of HfO2 thin films is studied on Si(100) and GaAs(100) surfaces. The films are grown using tetrakis(dimethyl)amino hafnium (TDMAH) and H2O precursors at a deposition temperature of 275°C. The Si surfaces used include a H-terminated surface and an OH-rich chemical oxide. GaAs substrates are subjected to two different predeposition treatments involving an HF and a NH4O...
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